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MSASC25H45KVR PDF预览

MSASC25H45KVR

更新时间: 2024-11-28 13:11:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 肖特基二极管
页数 文件大小 规格书
2页 79K
描述
Rectifier Diode,

MSASC25H45KVR 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

MSASC25H45KVR 数据手册

 浏览型号MSASC25H45KVR的Datasheet PDF文件第2页 
2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: (714) 979-8220  
FAX: (714) 966-5256  
1N6815  
(MSASC25H45K)  
1N6815R  
Features  
Tungsten/Platinum schottky barrier for very low VF  
Oxide passivated structure for very low leakage currents  
Guard ring protection for increased reverse energy capability  
Epitaxial structure minimizes forward voltage drop  
Hermetically sealed, low profile ceramic surface mount power package  
Low package inductance  
(MSASC25H45KR)  
45 Volts  
25 Amps  
Very low thermal resistance  
Available as standard polarity (strap is anode: 1N6815) and reverse  
polarity (strap is cathode: 1N6815R)  
LOW VOLTAGE  
DROP SCHOTTKY  
DIODE  
TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening  
i.a.w. Microsemi Internal Procedure PS11.50 available  
Maximum Ratings @ 25 C (unless otherwise specified)  
°
DESCRIPTION  
SYMBOL  
MAX.  
UNIT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Average Rectified Forward Current, Tc145°C  
derating, forward current, Tc145°C  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz  
Junction Temperature Range  
Storage Temperature Range  
45  
45  
45  
25  
(3.3)  
Volts  
Volts  
Volts  
Amps  
Amps/°C  
Amps  
Amp  
°C  
°C  
VRRM  
VRWM  
VR  
IF(ave)  
dIF/dT  
IFSM  
IRRM  
Tj  
Tstg  
θJC  
125  
2
-55 to +150  
-55 to +150  
Thermal Resistance, Junction to Case:  
1N6815  
1N6815R  
1.25  
1.35  
°C/W  
Mechanical Outline  
ThinKey™2  
Datasheet# MSC1458A August, 2000  

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