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MSASC25H45KRS PDF预览

MSASC25H45KRS

更新时间: 2024-11-30 19:53:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 95K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN

MSASC25H45KRS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.51其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:S-CSSO-G1JESD-609代码:e0
最大非重复峰值正向电流:280 A元件数量:1
相数:1端子数量:1
最大输出电流:25 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MSASC25H45KRS 数据手册

 浏览型号MSASC25H45KRS的Datasheet PDF文件第2页 
8700 E. Thomas Road  
Scottsdale, AZ 85252  
PH: (480) 941-6300  
FAX: (480) 941-1503  
MSASC25H45K  
MSASC25H45KR  
Features  
ꢀꢁ Tungsten/Platinum schottky barrier for very low VF  
ꢀꢁ Oxide passivated structure for very low leakage currents  
ꢀꢁ Guard ring protection for increased reverse energy capability  
ꢀꢁ Epitaxial structure minimizes forward voltage drop  
ꢀꢁ Hermetically sealed, low profile ceramic surface mount power package  
ꢀꢁ Low package inductance  
45 Volts  
25 Amps  
ꢀꢁ Very low thermal resistance  
LOW VOLTAGE  
DROP SCHOTTKY  
DIODE  
ꢀꢁ Available as standard polarity (strap is anode:MSASC25H45K) and  
reverse polarity (strap is cathode:MSASC25H45KR)  
ꢀꢁ TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening  
i.a.w. Microsemi Internal Procedure PS11.50 available  
Maximum Ratings @ 25C (unless otherwise specified)  
DESCRIPTION  
SYMBOL  
MAX.  
UNIT  
Peak Repetitive Reverse Voltage  
VRRM  
VRWM  
VR  
IF(ave)  
dIF/dT  
IFSM  
IRRM  
Tj  
Tstg  
45  
45  
45  
25  
(3.3)  
280  
2
Volts  
Volts  
Volts  
Amps  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Average Rectified Forward Current, Tc145C  
derating, forward current, Tc145C  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz  
Junction Temperature Range  
Storage Temperature Range  
Thermal Resistance, Junction to Case:  
Amps/C  
Amps  
Amp  
-55 to +150  
-55 to +150  
0.85  
C  
C  
C/W  
MSASC25H45K  
MSASC25H45KR  
JC  
0.95  
Mechanical Outline  
ThinKey™2  
Datasheet# MSC1458B  

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