Datasheet > MS15N100HGT1

MS15N100HGT1

更新时间： 2024-09-16 18:09:51

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
6页	3246K
描述
TO-220F

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MS15N100HGT1 数据手册

MS15N100HGC0/T1

Features



V_DS=1000V,I_D=15A

Low Crss

Low gate charge

Improved dv/dt capability

Applications



High efficiency switch mode power supplies

Electronic lamp ballasts based on half bridge

UPS

Absolute Ratings (Tc=25℃)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

1000

±30

I_DTC=25℃

TC=100℃

Drain Current-continuous

Drain Current-pulse(note1)

I_DM

Single Pulsed Avalanche Energy

E_AS

188

(T_j=25℃,I_AR=4A,V_DD=50V)(note2)

400

3.2

Maximum Power Dissipation

(TO-247)

W/℃

67.9

0.54

Maximum Power Dissipation

(TO-220F)

W/℃

Peak Diode Recovery voltage slope⁽²⁾

dv/dt

0.75

V/ns

Operating and Storage Temperature

Range

T_J,T_STG

-55~+175

℃

1. Pulse width Limited by safe operating arer

Electrical Characteristics(T_CASE=25℃ unless otherwise specified)

Parameter

Symbol Tests conditions Min Typ Max Units

Drain-Source Voltage

BV_DSS

I_D=250μA,V_GS=0V 1000

V_DS=V_DSS,V_GS=0V,

μA

Zero Gate Voltage Drain

Current

Tc=25℃

I_DSS

Tc=125℃

Gate-Body Leakage

Current

I_GSS

V_GS=±30V,V_DS=0V

±100 nA

H1.05

Maspower

12 3 4 5 6

中文翻译

下载PDF

与MS15N100HGT1相关器件

型号	品牌	获取价格	描述	数据表
MS15N120HGC0	MASPOWER	获取价格	TO-247
MS15N165HGC0	MASPOWER	获取价格	TO-247
MS16	KISEMICONDUCTOR	获取价格	SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER
MS16	ALTECH	获取价格	MS016
MS16	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
MS1600	MICROSEMI	获取价格	RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M1
MS1608100ML	ABC	获取价格	MULTILAYER CHIP INDUCTOR
MS16081R0ML	ABC	获取价格	MULTILAYER CHIP INDUCTOR
MS16081R2ML	ABC	获取价格	MULTILAYER CHIP INDUCTOR
MS16081R5ML	ABC	获取价格	MULTILAYER CHIP INDUCTOR