Datasheet > MS15N120HGC0

MS15N120HGC0

更新时间： 2024-09-16 18:08:55

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
6页	2991K
描述
TO-247

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中文翻译

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数据手册

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MS15N120HGC0 数据手册

MS15N120HGC0

Planar Process NMOS

Features



V_DS=1200V,I_D=15A

R_DS(on)<0.8Ω @ V_GS=10V

High density cell design for ultra low Rdson

Low gate charge



Improved dv/dt capability

RoHS product

Applications



High Voltage Switched-mode and

resonant-mode power supplies

High Voltage Pulse Power Applications

High Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators



High Voltage DC-DC converters

High Voltage DC-AC inverters

Absolute Ratings (Tc=25℃)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

1200

±30

I_D(25℃)

Drain Current-continuous

I_D(100℃)

Drain Current-pulse

I_DM

Single Pulsed Avalanche Energy

E_AS

480

TC=25℃

Derate above

25℃

960

Maximum Power Dissipation

7.7

W/℃

Operating and Storage

Temperature Range

T_J,T_STG

-55~+150

℃

Electrical Characteristics(T_CASE=25℃ unless otherwise specified)

Parameter

Symbol Tests conditions Min Typ Max Units

Drain-Source Voltage

BV_DSS

I_D=1mA,V_GS=0V

1200

H1.04

Maspower

12 3 4 5 6

中文翻译

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