Datasheet > MRFG35010AR5

MRFG35010AR5

更新时间： 2024-01-24 00:32:14

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
18页	415K
描述
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN

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MRFG35010AR5 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.09	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	15 V
FET 技术：	HIGH ELECTRON MOBILITY	最高频带：	C BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	工作模式：	DEPLETION MODE
最高工作温度：	175 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	子类别：	FET RF Small Signal
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

MRFG35010AR5 数据手册

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MRFG35010AR1

RF Device Data

Freescale Semiconductor

Document Number: MRFG35010A

1^R8^{ev. 2, 12/2008}

1...15 16 1718

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与MRFG35010AR5相关器件

型号	品牌	描述	获取价格	数据表
MRFG35010MT1	MOTOROLA	Gallium Arsenide PHEMT	获取价格
MRFG35010MT1	FREESCALE	Gallium Arsenide PHEMT RF Power Field Effect Transistor	获取价格
MRFG35010N	FREESCALE	RF Power Field Effect Transistor	获取价格
MRFG35010NT1	FREESCALE	Gallium Arsenide PHEMT RF Power Field Effect Transistor	获取价格
MRFG35010R1	FREESCALE	Gallium Arsenide PHEMT RF Power Field Effect Transistor	获取价格
MRFG35010R1	NXP	S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN	获取价格

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