MRF857D

更新时间： 2024-11-11 04:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管射频
页数	文件大小	规格书
6页	173K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF857D 数据手册

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by MRF857/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Designed for 24 Volt UHF large–signal, common emitter, class A linear

amplifier applications in industrial and commercial equipment operating in the

range of 800–960 MHz.

CLASS A

800–960 MHz

2.1 W (CW), 24 V

NPN SILICON

Specified for V

= 24 Vdc, I = 0.3 Adc Characteristics

Output Power = 2.1 Watts CW

Minimum Power Gain = 12.5 dB

Minimum ITO = +43 dBm

RF POWER TRANSISTOR

Typical Noise Figure = 5.25 dB

Characterized with Small–Signal S–Parameters and Series Equivalent

Large–Signal Parameters from 800–960 MHz

Silicon Nitride Passivated

100% Tested for Load Mismatch Stress at All Phase Angles with 30:1

VSWR @ 24 Vdc, I = 0.3 Adc and Rated Output Power

CASE 305D–01, STYLE 1

Will Withstand RF Input Overdrive of 0.4 W CW

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Total Device Dissipation @ T = 50 C

Derate above 50 C

0.114

Watts

W/ C

Operating Junction Temperature

Storage Temperature Range

200

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance (T = 150 C, T = 50 C)

Symbol

Max

Unit

8.4

C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 20 mA, I = 0)

—

Vdc

(BR)CEO

Collector–Emitter Breakdown Voltage (I = 20 mA, V

= 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage (I = 20 mA, I = 0)

Vdc

Emitter–Base Breakdown Voltage (I = 1 mA, I = 0)

Vdc

Collector Cutoff Current (V

= 24 V, I = 0)

CES

—

(continued)

REV 3

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF857S

12 3 4 5 6

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