Datasheet > MRF890_07

MRF890_07

更新时间： 2024-11-11 12:20:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	38K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF890_07 数据手册

MRF890

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .205 4L STUD

The ASI MRF890 is Designed for

UHF Class A Amplifier Applications in

Cellular Base Station Equipment.

FEATURES:

• Pg = 9.0 dB min. @ 900 MHz

• P_1dB= 2.0 Watts min. at 900 MHz

• Omnigold™ Metalization System

#8-32UNC

MAXIMUM RATINGS

0.5 A

55 V

I_C

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

V_CBO

V_CER

V_EBO

P_DISS

T_J

.976 / 24.800

.028 / 0.700

1.000 / 25.4000

.031 / 0.800

30 V

4.0 V

.138 / 3.500

.161 / 4.100

.098 / 2.500

.200 / 5.100

.196 / 5.000

.110 / 2.800

.208 / 5.300

7.0 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

25 ^°C/W

.004 / 0.100

.425 / 10.800

.200 / 5.100

.006 / 0.150

.465 / 11.800

2.05 / 5.200

T_STG

θ_JC

1 = Collector 2 = Emitter 3 = Base

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 5.0 mA

I_E= 5.0 mA

BV_CES

BV_EBO

I_CBO

4.0

_CB= 30 V

_CE= 5.0 V

500

100

µA

---

I_C= 100 mA

P_OUT= 2.0 V

h_FE

V_CB= 30 V

f = 1.0 MHz

f = 900 MHz

2.0

C_OB

9.0

P_G

V_CC= 24 V

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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