Datasheet > MRF8HP21080H

MRF8HP21080H

更新时间： 2024-09-26 02:52:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	584K
描述
N-Channel Enhancement-Mode Lateral MOSFET

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数据手册

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MRF8HP21080H 数据手册

Document Number: MRF8HP21080H

Rev. 0, 6/2011

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF8HP21080HR3

MRF8HP21080HSR3

Designed for W--CDMA and LTE base station applications with frequencies

from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.

•

Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

I_DQA= 150 mA, V_GSB= 1.1 Vdc, P_out= 16 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.

2110--2170 MHz, 16 W AVG., 28 V

W--CDMA, LTE

LATERAL N--CHANNEL

RF POWER MOSFETs

Output PAR

(dB)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

14.1

14.5

14.4

(%)

46.7

46.2

45.7

8.3

8.2

8.1

--30.6

--32.1

--33.6

CASE 465M--01, STYLE 1

N I -- 7 8 0 -- 4

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 3 dB Compression Point ≃ 100 Watts ⁽¹⁾

)

MRF8HP21080HR3

Features

•

Advanced High Performance In--Package Doherty

Production Tested in a Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Large--Signal Load--Pull Parameters and Common

Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

RoHS Compliant

NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,

13 inch Reel. For R5 Tape and Reel option, see p. 13.

CASE 465H--02, STYLE 1

NI--780S--4

MRF8HP21080HSR3

•

Carrier

•

RF /V

outA DSA

inA GSA

•

NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,

13 inch Reel. For R5 Tape and Reel option, see p. 13.

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

--6.0, +10

32, +0

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

°C

(2,3)

225

°C

CW Operation @ T = 25°C

220

Derate above 25°C

3.3

W/°C

1. P3dB = P

+ 7.0 dB where P

avg

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF8HP21080HR3 MRF8HP21080HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

中文翻译

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与MRF8HP21080H相关器件

型号	品牌	获取价格	描述	数据表
MRF8HP21080HR3	NXP	获取价格	W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V
MRF8HP21080HSR3	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8HP21130HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8HP21130HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P18265HR6	NXP	获取价格	Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W Avg., 30 V
MRF8P18265HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8P18265HSR6	NXP	获取价格	Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W Avg., 30 V
MRF8P20140WGHSR3	NXP	获取价格	Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V
MRF8P20140WH	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P20140WHR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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