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MRF891 PDF预览

MRF891

更新时间: 2024-11-10 22:31:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管射频
页数 文件大小 规格书
4页 120K
描述
RF POWER TRANSISTORS NPN SILICON

MRF891 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.62
最大集电极电流 (IC):0.6 A基于收集器的最大容量:8 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):30最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F6元件数量:1
端子数量:6最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:18 W最大功率耗散 (Abs):18 W
最小功率增益 (Gp):9 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF891 数据手册

 浏览型号MRF891的Datasheet PDF文件第2页浏览型号MRF891的Datasheet PDF文件第3页浏览型号MRF891的Datasheet PDF文件第4页 
Order this document  
by MRF891/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed for 24 volt UHF large–signal, common–emitter amplifier applica-  
tions in industrial and commercial FM equipment operating in the range of  
800960 MHz.  
Specified 24 Volt, 900 MHz Characteristics  
Output Power = 5.0 Watts  
Power Gain = 9.0 dB Min  
5.0 W, 900 MHz  
RF POWER  
TRANSISTORS  
NPN SILICON  
Efficiency = 50% Min  
Series Equivalent Large–Signal Characterization  
Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output  
Power and Supply Voltage  
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal  
Migration  
Silicon Nitride Passivated  
Circuit board photomaster available upon request by contacting  
RF Tactical Marketing in Phoenix, AZ.  
CASE 319–07, STYLE 2  
MRF891  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V
CEO  
V
55  
CES  
EBO  
V
4.0  
0.6  
I
C
Total Device Dissipation @ T = 50°C (1)  
Derate above 50°C  
P
18  
0.143  
Watts  
W/°C  
A
D
CASE 319A–02, STYLE 2  
MRF891S  
Storage Temperature Range  
T
stg  
65 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case (2)  
Symbol  
Max  
Unit  
R
7.0  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 20 mAdc, I = 0)  
V
30  
55  
4.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 20 mAdc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 0.5 mAdc, I = 0)  
V
Vdc  
E
C
Collector Cutoff Current  
(V = 30 Vdc, V = 0, T = 25°C)  
I
1.0  
mAdc  
CES  
CE BE  
C
ON CHARACTERISTICS  
DC Current Gain  
(I = 200 mAdc, V  
C CE  
h
FE  
30  
150  
= 5.0 Vdc)  
NOTES:  
(continued)  
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.  
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.  
REV 6  
Motorola, Inc. 1994  

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