MRA0510-50H

更新时间： 2024-02-10 16:38:18

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频双极晶体管放大器局域网
页数	文件大小	规格书
4页	64K
描述
UHF POWER TRANSISTOR

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MRA0510-50H 数据手册

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by MRA0510–50H/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Designed primarily for wideband, large–signal output and driver amplifier

stages in the 500 to 1000 MHz frequency range.

•

Designed for Class AB Linear Power Amplifiers

Specified 28 Volt, 1000 MHz Characteristics:

Output Power — 50 Watts

7.0 dB, 500 – 1000 MHz

Power Gain — 7 dB (Min), Class AB

50 W

BROADBAND

UHF POWER TRANSISTOR

•

Built–In Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 391–03, STYLE 1

(HLP–42)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

125

0.715

Watts

W/°C

Operating Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS

200

°C

stg

–65 to +200

Characteristic

Symbol

Max

Unit

Thermal Resistance, RF, Junction to Case (T = 70°C)

1.4

°C/W

θJC

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Breakdown Voltage (I = 25 mA, V

= 0)

–

Vdc

(BR)CES

(BR)CBO

(BR)EBO

(BR)CER

Collector–Base Breakdown Voltage (I = 25 mA, I = 0)

Emitter–Base Breakdown Voltage (I = 5 mA, I = 0)

–

Vdc

Collector–Emitter Breakdown Voltage (I = 25 mA, R

= 1 Ω)

–

Vdc

Collector Cutoff Current (V

= 30 V, I = 0)

mAdc

(continued)

CBO

(1) Each transistor chip measured separately.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRA0510–50H

12 3 4

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