Datasheet > MRA100014L

MRA100014L

更新时间： 2024-09-08 22:29:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
2页	55K
描述
UHF POWER TRANSISTOR

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MRA100014L 数据手册

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by MRA1000–14L/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

. . . designed primarily for wideband, large–signal output and driver amplifier

stages to 1000 MHz.

•

Designed for Class A Linear Power Amplifiers

Specified 19 Volt, 1000 MHz Characteristics:

Output Power — 14 Watts

8.0 dB, TO 1000 MHz

14 WATTS BROADBAND

Power Gain — 8.0 dB, Small–Signal

•

Built–In Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

UHF POWER TRANSISTOR

Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

CASE 145D–02, STYLE 1

(.380 SOE)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

3.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.48

Watts

W/°C

Operating Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS

200

°C

stg

–65 to +150

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (T = 70°C)

2.1

°C/W

θJC

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 25 mA, I = 0)

3.5

—

Vdc

(BR)CEO

Collector–Emitter Breakdown Voltage (I = 25 mA, V

= 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage (I = 25 mA, I = 0)

Vdc

Emitter–Base Breakdown Voltage (I = 5.0 mA, I = 0)

Vdc

Collector Cutoff Current (V

= 19 V, I = 0)

mAdc

CBO

ON CHARACTERISTICS

DC Current Gain (I = 1.0 A, V

= 5.0 V)

—

(continued)

REV 6

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1994

MRA1000–14L

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