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MRA1000-3.5L PDF预览

MRA1000-3.5L

更新时间: 2024-11-21 20:10:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 78K
描述
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

MRA1000-3.5L 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82其他特性:DIFFUSED BALLAST RESISTORS
基于收集器的最大容量:15 pF集电极-发射极最大电压:28 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN功耗环境最大值:22 W
最小功率增益 (Gp):10 dB认证状态:Not Qualified
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRA1000-3.5L 数据手册

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Order this document  
by MRA1000–3.5L/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed primarily for wideband, large–signal output and driver amplifier  
stages to 1000 MHz.  
Designed for Class A Linear Power Amplifiers  
Specified 19 Volt, 1000 MHz Characteristics:  
Output Power — 3.5 Watts  
10 dB, 1000 MHz  
Power Gain — 10 dB, Small–Signal  
3.5 W  
BROADBAND  
UHF POWER TRANSISTOR  
Built–In Matching Network for Broadband Operation  
Gold Metallization for Improved Reliability  
Diffused Ballast Resistors  
CASE 145D–02, STYLE 1  
(.380 SOE)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
28  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
Vdc  
50  
3.5  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
22  
0.125  
Watts  
W/°C  
C
Operating Junction Temperature  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
200  
°C  
°C  
J
T
stg  
65 to +200  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case (T = 70°C)  
R
8
°C/W  
C
θJC  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 10 mA, I = 0)  
V
28  
50  
50  
3.5  
Vdc  
Vdc  
C
B
(BR)CEO  
Collector–Emitter Breakdown Voltage (I = 10 mA, V  
= 0)  
V
C
BE  
(BR)CES  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 10 mA, I = 0)  
V
V
Vdc  
C
E
Emitter–Base Breakdown Voltage (I = 5 mA, I = 0)  
Vdc  
E
C
Collector Cutoff Current (V  
.
= 30 V, I = 0)  
I
CBO  
10  
mAdc  
(continued)  
CB  
E
REV 1  
Motorola, Inc. 1997  

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