Datasheet > MRA100035L

MRA100035L

更新时间： 2024-09-08 22:29:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	82K
描述
UHF POWER TRANSISTOR

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中文翻译

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数据手册

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MRA100035L 数据手册

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by MRA1000–3.5L/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Designed primarily for wideband, large–signal output and driver amplifier

stages to 1000 MHz.

•

Designed for Class A Linear Power Amplifiers

Specified 19 Volt, 1000 MHz Characteristics:

Output Power — 3.5 Watts

10 dB, 1000 MHz

Power Gain — 10 dB, Small–Signal

3.5 W

BROADBAND

UHF POWER TRANSISTOR

•

Built–In Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 145D–02, STYLE 1

(.380 SOE)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

3.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.125

Watts

W/°C

Operating Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS

200

°C

stg

–65 to +200

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (T = 70°C)

°C/W

θJC

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 10 mA, I = 0)

3.5

–

Vdc

(BR)CEO

Collector–Emitter Breakdown Voltage (I = 10 mA, V

= 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage (I = 10 mA, I = 0)

–

Vdc

Emitter–Base Breakdown Voltage (I = 5 mA, I = 0)

–

Vdc

Collector Cutoff Current (V

= 30 V, I = 0)

CBO

mAdc

(continued)

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRA1000–3.5L

12 3 4

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