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MRA10007L

更新时间： 2024-09-08 22:29:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
2页 54K
描述
UHF POWER TRANSISTOR

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MRA10007L 数据手册

 浏览型号MRA10007L的Datasheet PDF文件第2页 
Order this document  
by MRA1000–7L/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed primarily for wideband, large–signal output and driver amplifier  
stages to 1000 MHz.  
•
•
Designed for Class A Linear Power Amplifiers  
Specified 19 Volt, 1000 MHz Characteristics:  
Output Power — 7.0 Watts  
9.0 dB, TO 1000 MHz  
7.0 WATTS BROADBAND  
UHF POWER TRANSISTOR  
Power Gain — 9.0 dB Min, Small–Signal  
•
•
•
•
Built–In Matching Network for Broadband Operation  
Gold Metallization for Improved Reliability  
Diffused Ballast Resistors  
Circuit board photomaster available upon request by  
contacting RF Tactical Marketing in Phoenix, AZ.  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Value  
28  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO  
V
CBO  
V
EBO  
50  
3.5  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
42  
0.25  
Watts  
W/°C  
C
CASE 145D–02, STYLE 1  
(.380 SOE)  
Operating Junction Temperature  
Storage Temperature Range  
T
200  
°C  
°C  
J
T
stg  
–65 to +150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case (T = 70°C)  
R
4.0  
°C/W  
C
θJC  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 20 mA, I = 0)  
V
(BR)CEO  
28  
50  
50  
3.5  
—
—
—
—
—
—
—
—
—
—
15  
Vdc  
Vdc  
C
B
Collector–Emitter Breakdown Voltage (I = 20 mA, V  
BE  
= 0)  
V
C
(BR)CES  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 20 mA, I = 0)  
V
V
Vdc  
C
E
Emitter–Base Breakdown Voltage (I = 5.0 mA, I = 0)  
Vdc  
E
C
Collector Cutoff Current (V  
CB  
= 19 V, I = 0)  
I
mAdc  
E
CBO  
ON CHARACTERISTICS  
DC Current Gain (I = 1.0 A, V  
CE  
= 5.0 V)  
h
20  
—
—
—
10  
90  
22  
—
—
pF  
dB  
C
FE  
DYNAMIC CHARACTERISTICS  
Output Capacitance (V  
CB  
= 24 V, I = 0, f = 1.0 MHz)  
C
ob  
E
FUNCTIONAL TESTS  
Common–Emitter Amplifier Small–Signal Gain  
(V = 19 V, f = 1.0 GHz, I = 1.2 A)  
G
9.0  
SS  
CE  
Load Mismatch  
(V = 19 V, I = 1.2 A, P  
C
ψ
= 7.0 W, f = 1.0 GHz,  
No Degradation in Output Power  
CE out  
C
Load VSWR = ∞:1, All Phase Angles)  
P
P
Overdrive (V = 19 V, I = 1.2 A, f = 1.0 GHz)  
(No degradation)  
in  
—
—
—
3.5  
—
W
W
CE  
C
over  
Output Power, 1.0 dB Compression Point  
7.0  
o1 dB  
(V  
CE  
= 19 V, f = 1.0 GHz, I = 1.2 A)  
C
REV 6  
Motorola, Inc. 1994  
12

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