Datasheet > MRA0510-50H

MRA0510-50H

更新时间： 2024-01-28 18:54:54

品牌	Logo	应用领域
ASI		晶体晶体管射频放大器局域网
页数	文件大小	规格书
1页	51K
描述
NPN SILICON RF POWER TRANSISTOR

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MRA0510-50H 数据手册

MRA0510-50H

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .400 4L FLG.

DESCRIPTION:

The ASI MRA0510-50H is Designed

for Class AB Linear Amplifier

Applications up to 1000 MHz.

FEATURES:

• Omnigold™ Metalization System

• Diffused Ballast Resistors.

• Internal Matching Network

MAXIMUM RATINGS

30 V

60 V

V_CEO

V_CBO

V_EBO

P_DISS

T_J

4.0 V

FLANGE

125 W @ T_C= 25 °C

-65 °C to +200 °C

1.4 ^OC/W

T_STG

θ_JC

NONE

MINIMUM TYPICAL MAXIMUM UNITS

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CES

TEST CONDITIONS

I_C= 25 mA

I_E= 5.0 mA

BV_CBO

BV_EBO

I_CBO

4.0

V_CB= 30 V

_CE= 5.0 V

---

I_C= 1.0 A

h_FE

_CB= 28 V

f = 1.0 MHz

f = 1.0 GHz

C_ob

7.0

5:1

G_PB

---

V_CE= 28 V

P_out= 50 W

VSRW

I_CQ= 2 X 120 mA

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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