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MPSA45LEADFREE PDF预览

MPSA45LEADFREE

更新时间: 2024-11-03 21:21:11
品牌 Logo 应用领域
CENTRAL 晶体管
页数 文件大小 规格书
3页 659K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

MPSA45LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.15
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

MPSA45LEADFREE 数据手册

 浏览型号MPSA45LEADFREE的Datasheet PDF文件第2页浏览型号MPSA45LEADFREE的Datasheet PDF文件第3页 
MPSA44  
MPSA45  
www.centralsemi.com  
SILICON  
HIGH VOLTAGE  
NPN TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MPSA44 and  
MPSA45 are silicon NPN transistors designed for  
high voltage applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
SYMBOL  
MPSA44  
500  
400  
MPSA45  
400  
350  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
V
V
mA  
mW  
°C  
6.0  
300  
625  
I
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
MPSA44  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
V
V
V
V
V
=400V  
=320V  
=400V  
=320V  
=4.0V  
-
-
-
-
-
100  
-
500  
-
100  
-
-
-
-
0.40  
0.50  
0.75  
0.75  
-
200  
-
-
-
-
-
-
-
-
nA  
CBO  
CBO  
CES  
CES  
EBO  
CBO  
CES  
CEO  
CB  
CB  
CE  
CE  
EB  
100  
nA  
nA  
nA  
nA  
V
V
V
V
V
-
500  
100  
-
-
-
BV  
BV  
BV  
BV  
V
V
V
V
h
h
h
h
I =100μA  
500  
500  
400  
6.0  
-
-
-
-
40  
50  
45  
40  
20  
-
400  
400  
350  
6.0  
-
-
-
-
40  
50  
45  
40  
20  
-
C
I =100μA  
C
I =1.0mA  
C
I =10μA  
-
EBO  
E
I =1.0mA, I =0.1mA  
0.40  
0.50  
0.75  
0.75  
-
200  
-
-
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
FE  
FE  
FE  
T
C
B
B
B
B
C
C
C
C
I =10mA, I =1.0mA  
V
V
V
C
I =50mA, I =5.0mA  
C
I =10mA, I =1.0mA  
C
V
=10V, I =1.0mA  
=10V, I =10mA  
=10V, I =50mA  
=10V, I =100mA  
=10V, I =10mA, f=10MHz  
=20V, I =0, f=1.0MHz  
=0.5V, I =0, f=1.0MHz  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
V
V
V
V
V
V
f
C
C
-
-
MHz  
pF  
pF  
C
E
C
6.0  
110  
6.0  
110  
ob  
ib  
-
-
R1 (18-March 2014)  

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