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MPSA55 PDF预览

MPSA55

更新时间: 2024-11-02 22:51:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
8页 115K
描述
Amplifier Transistors

MPSA55 数据手册

 浏览型号MPSA55的Datasheet PDF文件第2页浏览型号MPSA55的Datasheet PDF文件第3页浏览型号MPSA55的Datasheet PDF文件第4页浏览型号MPSA55的Datasheet PDF文件第5页浏览型号MPSA55的Datasheet PDF文件第6页浏览型号MPSA55的Datasheet PDF文件第7页 
MPSA05, MPSA06, MPSA55,  
MPSA56  
MPSA06 and MPSA56 are Preferred Devices  
Amplifier Transistors  
Voltage and Current are Negative  
for PNP Transistors  
http://onsemi.com  
NPN  
PNP  
NPN  
COLLECTOR  
3
COLLECTOR  
3
MPSA05, MPSA06  
PNP  
MPSA55, MPSA56  
2
2
BASE  
BASE  
MARKING DIAGRAM  
1
1
TO−92  
CASE 29  
STYLE 1  
EMITTER  
EMITTER  
MPS  
Axxx  
YWW  
STYLE 1  
MPSA05, MPSA06  
STYLE 1  
MPSA55, MPSA56  
MAXIMUM RATINGS  
MPSA = Specific Device Code  
1
Rating  
Symbol  
Value  
Unit  
xxx  
Y
= 05, 06, 55 or 56  
= Year  
2
3
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
WW  
= Work Week  
MPSA05, MPSA55  
MPSA06, MPSA56  
60  
80  
ORDERING INFORMATION  
CollectorBase Voltage  
Vdc  
MPSA05, MPSA55  
MPSA06, MPSA56  
60  
80  
Device  
MPSA05  
Package  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
TO−92  
Shipping  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
5000 Units/Box  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current − Continuous  
I
C
500  
mAdc  
MPSA05RLRA  
MPSA05RLRM  
MPSA06  
Total Device Dissipation  
P
P
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation  
D
MPSA06RLRA  
MPSA06RLRM  
MPSA06RLRP  
MPSA55  
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MPSA55RLRA  
MPSA56  
2000/Tape & Reel  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θ
JA  
(Note 1.)  
MPSA56RLRA  
MPSA56RLRM  
MPSA56RLRP  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θ
JC  
1. R  
is measured with the device soldered into a typical printed circuit board.  
q
JA  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2001 − Rev. 1  
MPSA05/D  

MPSA55 替代型号

型号 品牌 替代类型 描述 数据表
BC337-16 DIOTEC

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COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
MPSA55/D10Z{OPTION18} TI

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D11Z TI

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D11Z(OPTION5) TI

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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA55/D11Z{OPTION18} TI

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D11Z{OPTION5} TI

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D26Z TI

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D26Z(OPTION18) TI

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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA55/D26Z(OPTION5) TI

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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA55/D27Z(OPTION18) NSC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92