MPSA55

更新时间： 2024-11-02 22:51:11

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管
页数	文件大小	规格书
1页	342K
描述
PNP Silicon Amplifier Transistor

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MPSA55 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MPSA55

MPSA56

Features

Capable of 1.5Watts of Power Dissipation.

Collector-current 500mA

PNP Silicon

Amplifier Transistor

Collector-base Voltage 80V

Operating and storage junction temperature range: -55^OC to +150^OC

Pin Configuration

Bottom View

TO-92

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

4.0

500

625

5.0

1.5

Unit

Collector Current Continuous

P_D

Total Device Dissipation @T =25^OC

Derate above 25^OC

mW/ ^OC

P_D

Total Device Dissipation @T =25^OC

Derate above 25^OC

Junction Temperature

Storage Temperature

mW/ ^OC

T_J

T_STG

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage⁽¹⁾

(I =1.0mAdc, I_B=0)

MPSA55

MPSA56

4.0

Vdc

V_(BR)EBO

I_CES

Emitter-Base Breakdown Voltage

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

(V_CE=60Vdc, I =0)

Collector Cutoff Current

CBO

(V_CB=60Vdc, I =0)

MPSA55

MPSA56

0.1

uAdc

(V_CB=80Vdc, I =0)

ON CHARACTERISTICS ⁽¹⁾

h_FE(1)

DC Current Gain

(I =10mAdc, V_CE=1.0Vdc)

DC Current Gain

100

DIMENSIONS

h_FE(2)

INCHES

MIN

.175

MIN

(I =100mAdc, V_CE=1.0Vdc)

DIM

MAX

4.70

---

NOTE

V_CE(sat)

V_BE(on)

Collector-Emitter Saturation Voltage

.185

---

4.45

4.46

12.7

0.41

3.43

2.42

(I =100mAdc, I_B=10mAdc)

0.25

1.2

Vdc

.175

.500

Base-Emitter Saturation Voltage

(I =100mAdc, V_CE=1.0Vdc)

.016

.020

.145

.105

0.63

3.68

2.67

.135

.095

SMALL-SIGNAL CHARACTERISTICS

f_T

Current-Gain – Bandwidth Product⁽³⁾

(I =100mAdc, V_CE=1.0Vdc,

f=100MHz)

MPSA55

MPSA56

MHz

1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%

f_Tis defined as the frequency at which |h_fe| extrapolates to unity.

www.mccsemi.com

中文翻译

下载PDF

MPSA55 替代型号

型号	品牌	替代类型	描述	数据表
BC557C	DIOTEC	功能相似	Si-Epitaxial PlanarTransistors
BC557B	DIOTEC	功能相似	Si-Epitaxial PlanarTransistors
BC557A	DIOTEC	功能相似	Si-Epitaxial PlanarTransistors

与MPSA55相关器件

型号	品牌	获取价格	描述	数据表
MPS-A55	MICRO-ELECTRONICS	获取价格	COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS
MPSA55/D10Z{OPTION18}	TI	获取价格	500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D11Z	TI	获取价格	500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D11Z(OPTION5)	TI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA55/D11Z{OPTION18}	TI	获取价格	500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D11Z{OPTION5}	TI	获取价格	500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D26Z	TI	获取价格	500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55/D26Z(OPTION18)	TI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA55/D26Z(OPTION5)	TI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA55/D27Z(OPTION18)	NSC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

与MPSA55相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

29
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

28

产品中心

服务支持

精选活动

关于我们

帮助中心

MPSA55

MPSA55 数据手册

MPSA55 替代型号

与MPSA55相关器件

与MPSA55相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MPSA55

MPSA55 数据手册

MPSA55 替代型号

与MPSA55相关器件

与MPSA55相关文章

您还可以找

您在本页遇到什么问题？