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MPSA18_01 PDF预览

MPSA18_01

更新时间: 2024-11-05 04:39:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
7页 296K
描述
NPN General Purpose Amplifier

MPSA18_01 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
MPSA18  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, applications at  
collector currents from 1µ A to 50 mA. Sourced from Process  
07. See 2N5088 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
µ
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
45  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
100  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA18  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Rθ  
Thermal Resistance, Junction to Case  
83.3  
°C/W  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

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