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MPSA18RLRPG PDF预览

MPSA18RLRPG

更新时间： 2024-09-23 13:11:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 81K
描述
200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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中文翻译

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MPSA18RLRPG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.11
其他特性：LOW NOISE最大集电极电流 (IC)：0.2 A
集电极-发射极最大电压：45 V配置：SINGLE
最小直流电流增益 (hFE)：500JEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.625 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：160 MHzBase Number Matches：1

MPSA18RLRPG 数据手册

 浏览型号MPSA18RLRPG的Datasheet PDF文件第2页浏览型号MPSA18RLRPG的Datasheet PDF文件第3页浏览型号MPSA18RLRPG的Datasheet PDF文件第4页浏览型号MPSA18RLRPG的Datasheet PDF文件第5页 
MPSA18  
Preferred Device  
Low Noise Transistor  
NPN Silicon  
Features  
• These are Pb−Free Devices*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
BASE  
V
CEO  
V
CBO  
V
EBO  
1
EMITTER  
45  
Vdc  
6.5  
Vdc  
Collector Current − Continuous  
I
200  
mAdc  
C
TO−92  
CASE 29  
STYLE 1  
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
Derate above 25°C  
1
1
2
2
3
3
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
200  
°C/W  
q
JA  
Thermal Resistance, Junction−to−Case  
R
83.3  
°C/W  
q
MPS  
A18  
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
AYWW G  
G
1. R  
is measured with the device soldered into a typical printed circuit board.  
θ
JA  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MPSA18G  
TO−92  
5000 Units / Bulk  
2000/Tape & Reel  
(Pb−Free)  
MPSA18RLRAG  
MPSA18RLRMG  
TO−92  
(Pb−Free)  
TO−92  
(Pb−Free)  
2000/Ammo Pack  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2007 − Rev. 4  
MPSA18/D  
 
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中文翻译

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MPSA18RLRPG 替代型号

型号 品牌 替代类型 描述 数据表
MPSA18RLRAG ONSEMI

类似代替

 Low Noise Transistor NPN Silicon
ZTX453 DIODES

功能相似

 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
ZTX551 DIODES

功能相似

 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

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