Datasheet > MPSA194

MPSA194

更新时间： 2024-09-23 04:39:15

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管局域网
页数	文件大小	规格书
1页	54K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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MPSA194 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.57	最大集电极电流 (IC)：	0.8 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	10 MHz
Base Number Matches：	1

MPSA194 数据手册

UTCMPSA194

PNP EPITAXIAL PLANAR TRANSISTOR

PNP EPITAXIAL PLANAR

TRANSISTOR

DESCRIPTION

The MPSA194 is designed for high voltage low

power switching applications especially for use in

telephone and telecommunication circuits.

FEATURES

*Collector-Emitter Voltage:

V_CEO=400V

*Power Dissipation: 1.0W

TO-92

APPLICATIONS

*Telephone circuit

*Telecommunication circuit

1:EMITTER 2:BASE 3:COLLECTOR

ABSOLUTE MAXIMUM RATINGS _{( Operating temperature range applies unless otherwise specified )}

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector dissipation(Ta=25°C)

Collector current

SYMBOL

V_CBO

V_CEO

V_EBO

T_j

T_STG

RATING

400

1.0

800

150

-55 ~ +150

UNIT

°C

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS_{(Tj=25°C,unless otherwise specified)}

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

SYMBOL

BV_CBO

BV_CEO

I_CBO

TEST CONDITIONS

Ic=100µA,IE=0

MIN TYP MAX UNIT

400

Ic=1mA,I_B=0

V_CB=400V,I_E=0

V_CB=200V,V_BE=0

V_EB=6V,Ic=0

µA

Collector cut-off current

Emitter cut-off current

I_CEO

I_EBO

0.2

DC current gain(note)

h_FE

V_CE=10V,Ic=1mA

V_CE=10V,Ic=20mA

V_CE=10V,Ic=80mA

Ic=20mA,I_B=2mA

Ic=80mA,I_B=4mA

Ic=20mA,I_B=2mA

V_CE=20V,I_E=10mA, f=1MHz

V_CB=20V,I_E=0, f=1MHz

800

Collector-emitter saturation voltage

V_CE(sat)

0.2

1.2

0.9

Base-emitter saturation voltage

Current Gain Bandwidth Porduct

Output capacitance

V_BE(sat)

Cob

MHz

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R201-026,A

中文翻译

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