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MPSA18TRB PDF预览

MPSA18TRB

更新时间: 2024-11-05 13:11:47
品牌 Logo 应用领域
CENTRAL 晶体晶体管
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2页 318K
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MPSA18TRB 数据手册

 浏览型号MPSA18TRB的Datasheet PDF文件第2页 
MPSA18  
www.centralsemi.com  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MPSA18 is a small  
signal, low noise NPN silicon transistor designed for  
general purpose amplifier applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
45  
45  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
6.5  
Continuous Collector Current  
Power Dissipation  
I
200  
mA  
mW  
°C  
C
P
625  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
=30V  
MIN  
MAX  
50  
UNITS  
nA  
I
V
CBO  
CB  
I =100μA  
BV  
BV  
BV  
45  
45  
V
V
V
V
V
V
CBO  
CEO  
EBO  
C
I =10mA  
C
I =10μA  
6.5  
E
V
V
V
I =10mA, I =0.5mA  
0.2  
0.3  
0.7  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =50mA, I =5.0mA  
C
B
V
=5.0V, I =1.0mA  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
CE  
C
h
h
h
h
V
V
V
V
V
V
V
V
=5.0V, I =10ꢀA  
400  
500  
500  
500  
100  
C
=5.0V, I =100ꢀA  
FE  
C
=5.0V, I =1.0mA  
FE  
C
=5.0V, I =10mA  
1500  
FE  
C
f
=5.0V, I =1.0mA, f=100MHz  
MHz  
pF  
T
C
C
C
=5.0V, I =0, f=1.0MHz  
3.0  
6.5  
ob  
E
=0.5V, I =0, f=1.0MHz  
pF  
ib  
C
NF  
=5.0V, I =100ꢀA, R =10kΩ,  
C S  
f=1.0kHz  
1.5  
dB  
R0 (3-February 2012)  

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