MPSA18

更新时间： 2024-09-22 22:51:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	281K
描述
Low Noise Transistor

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MPSA18 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

6.5

Vdc

Collector Current — Continuous

200

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

(1)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

6.5

—

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 µAdc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = 30 Vdc, I = 0)

1.0

nAdc

CBO

1. R

is measured with the device soldered into a typical printed circuit board.

θJA

2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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