Datasheet > MPS6560

MPS6560

更新时间： 2024-11-10 02:54:23

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描述
SILICON PLANAR EPITAXIAL TRANSISTORS

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数据手册

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MPS6560 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR EPITAXIAL TRANSISTORS

MPS6560 NPN

MPS6562 PNP

TO-92

Plastic Package

AudioTransistors

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

5.0

500

625

5.0

1.5

Collector Current Continuous

Power Dissipation at T_a=25ºC

Derate Above 25ºC

Power Dissipation at T_c=25ºC

Derate Above 25ºC

P_D

mW/ºC

P_D

mW/ºC

Operating And Storage Junction

Temperature Range

T_j, T_stg

- 55 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Case

R_{th (j-c)}

83.3

200

ºC/W

Junction to Ambient in free air

*R_{th (j-a)}

*R_{th (j-a)}is measured with the device soldered into a typical printed circuit board

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

MIN

DESCRIPTION

SYMBOL

V_CEO

V_CBO

V_EBO

I_CEO

TEST CONDITION

MAX

UNITS

I_C=1mA, I_B=0

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

I_C=100mA, I_E=0

I_E=100mA, I_C=0

V_CE=25V, I_B=0,

5.0

100

I_CBO

V_CB=20V, I_E=0,

I_EBO

V_EB=4V, I_C=0,

**h_FE

I_C=10mA, V_CE=1V

I_C=100mA, V_CE=1V

I_C=500mA, V_CE=1V

I_C=500mA, I_B=50mA

I_C=500mA, V_CE=1V

200

0.5

1.2

**V_{CE (sat)}

**V_{BE (on)}

Collector Emitter Saturation Voltage

Base Emitter (on) Voltage

DYNAMIC CHARACTERISTICS

DESCRIPTION

Current Gain Bandwidth Product

Output Capacitance

MIN

SYMBOL

TEST CONDITION

I_C=10mA, V_CE=10V, f=30MHz

MAX

UNITS

MHz

f_T

C_obo

V_CB=10V, I_E=0, f=100KHz

**PulseTest: Pulse Width <300ms, Duty Cycle<2%

MPS6560_6562 Rev_1 210606E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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