MPS404ARLRF

更新时间： 2024-09-17 13:01:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
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MPS404ARLRF 数据手册

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by MPS404A/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

Motorola Preferred Device

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–35

Unit

Vdc

CEO

CBO

EBO

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

–40

Vdc

–25

Vdc

Collector Current — Continuous

–150

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

(1)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

(I = –10 mAdc, I = 0)

–35

–40

–25

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = –10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = –10 Adc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = –10 Vdc, I = 0)

–100

nAdc

CBO

Emitter Cutoff Current

(V = –10 Vdc, I = 0)

—

EBO

2. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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