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MPS4124 PDF预览

MPS4124

更新时间: 2024-11-25 22:46:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 61K
描述
Amplifier Transistor(NPN Silicon)

MPS4124 数据手册

 浏览型号MPS4124的Datasheet PDF文件第2页浏览型号MPS4124的Datasheet PDF文件第3页浏览型号MPS4124的Datasheet PDF文件第4页 
Order this document  
by MPS4124/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
1
EMITTER  
2
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
25  
Unit  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
V
CE  
V
CB  
V
EB  
Vdc  
Vdc  
30  
5.0  
Vdc  
Collector Current — Continuous  
I
C
200  
mAdc  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mA, I = 0)  
25  
30  
5.0  
50  
50  
C
B
CollectorBase Breakdown Voltage  
(I = 10 A, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 0, I = 10 A)  
V
Vdc  
(BR)EBO  
C
E
Collector Cutoff Current  
(V = 20 V, I = 0)  
I
nAdc  
nAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 3.0 V, I = 0)  
E
I
EBO  
EB  
C
(Replaces MPS4123/D)  
Motorola, Inc. 1997

MPS4124 替代型号

型号 品牌 替代类型 描述 数据表
MPS4124RLRAG ONSEMI

完全替代

Amplifier Transistor NPN Silicon
MPS4124RLRA ONSEMI

完全替代

Amplifier Transistor NPN Silicon
MPS4124G ONSEMI

完全替代

Amplifier Transistor NPN Silicon

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