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MMT05A260T3

更新时间： 2024-11-20 21:53:39
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管高压
页数 文件大小 规格书
6页 52K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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中文翻译

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MMT05A260T3 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：CASE 403D-02, SMA, 2 PIN针数：2
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.79
Is Samacsys：N其他特性：UL RECOGNIZED
最大转折电压：320 V配置：SINGLE
最大断态直流电压：200 VJESD-30 代码：R-PDSO-C2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240认证状态：Not Qualified
子类别：Silicon Surge Protectors表面贴装：YES
端子面层：Tin/Lead (Sn80Pb20)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

MMT05A260T3 数据手册

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MMT05A230T3,  
MMT05A260T3,  
MMT05A310T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
http://onsemi.com  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
BIDIRECTIONAL TSPD  
50 AMP SURGE  
265 thru 365 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
• High Surge Current Capability: 50 Amps 10 x 1000 µsec; for  
Controlled Temperature Environments in the SMA package  
MT1  
MT2  
• The MMT05A230T3 Series is used to help equipment meet various  
regulatory requirements including: Telcordia 1089, ITU K.20 &  
K.21, IEC 950 and FCC Part 68  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
SMA  
(No Polarity)  
CASE 403D  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
MARKING DIAGRAM  
• Surface Mount Technology (SMT)  
•
Indicates UL Registered − File #E210057  
xxx  
• Device Marking: MMT05A230T3: PBF; MMT05A260T3: PBG;  
AYW  
MMT05A310T3: PBJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
xxx = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Rating  
Symbol  
Value  
Unit  
Off−State Voltage − Maximum  
V
DM  
Volts  
W
= Work Week  
MMT05A230T3  
MMT05A260T3  
MMT05A310T3  
"170  
"200  
"270  
ORDERING INFORMATION  
Maximum Pulse Surge Short Circuit  
Current Non−Repetitive  
Double Exponential Decay Waveform  
(Notes 1 and 2)  
A(pk)  
†
Device  
Package  
Shipping  
MMT05A230T3  
SMA  
12 mm Tape and Reel  
(5 K/Reel)  
8 x 20 µsec  
10 x 160 µsec  
10 x 560 µsec  
10 x 1000 µsec  
I
I
I
I
"150  
"100  
"70  
PPS1  
PPS2  
PPS3  
PPS4  
MMT05A260T3  
MMT05A310T3  
SMA  
SMA  
12 mm Tape and Reel  
(5 K/Reel)  
"50  
12 mm Tape and Reel  
(5 K/Reel)  
Maximum Non−Repetitive Rate of  
Change of On−State Current Double  
Exponential Waveform,  
di/dt  
"100  
A/µs  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
I
PK  
= 50 A, P = 15 ms  
W
1. Allow cooling before testing second polarity.  
2. Measured under pulse conditions to reduce heating.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 4  
MMT05A230T3/D  
 
123456

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