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MMT08B260T3

更新时间： 2024-11-21 03:48:55
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管高压
页数 文件大小 规格书
5页 60K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT08B260T3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-214包装说明：SMALL OUTLINE, R-PDSO-C2
针数：2Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.82
其他特性：UL RECOGNIZED最大转折电压：320 V
配置：SINGLE最大断态直流电压：200 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e0湿度敏感等级：1
通态非重复峰值电流：32 A元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235认证状态：Not Qualified
子类别：Silicon Surge Protectors表面贴装：YES
端子面层：Tin/Lead (Sn80Pb20)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

MMT08B260T3 数据手册

 浏览型号MMT08B260T3的Datasheet PDF文件第2页浏览型号MMT08B260T3的Datasheet PDF文件第3页浏览型号MMT08B260T3的Datasheet PDF文件第4页浏览型号MMT08B260T3的Datasheet PDF文件第5页 
MMT08B260T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
http://onsemi.com  
BIDIRECTIONAL TSPD  
80 AMP SURGE, 260 VOLTS  
(
)
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
MT1  
MT2  
• High Surge Current Capability: 80 Amps 10 x 1000 msec, for  
Controlled Temperature Environments  
• The MMT08B260T3 is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68.  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
MARKING DIAGRAM  
• Surface Mount Technology (SMT)  
•
Indicates UL Registered − File #E210057  
• Pb−Free Package is Available  
AYWW  
RPCG G  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
V
Off−State Voltage − Maximum  
V
200  
DM  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive  
A(pk)  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Double Exponential Decay Waveform  
(−25°C Initial Temperature) (Notes 1 & 2)  
2 x 10 msec  
RPCG = Device Code  
I
250  
250  
150  
150  
100  
100  
80  
PPS1  
PPS2  
PPS3  
PPS4  
PPS5  
PPS6  
PPS7  
G
= Pb−Free Package  
I
I
I
I
I
I
8 x 20 msec  
10 x 160 msec  
10 x 360 msec  
10 x 560 msec  
10 x 700 msec  
10 x 1000 msec  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Non−Repetitive Peak On−State Current  
60 Hz Full Sign Wave  
I
32  
A(pk)  
TSM  
MMT08B260T3  
MMT08B260T3G  
SMB  
2500 Tape & Reel  
2500 Tape & Reel  
Maximum Non−Repetitive Rate of Change of  
On−State Current Exponential Waveform,  
di/dt  
300  
A/ms  
SMB  
(Pb−Free)  
I
< 100A  
pk  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Allow cooling before testing second polarity.  
Preferred devices are recommended choices for future use  
2. Measured under pulse conditions to reduce heating.  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
MMT08B260T3/D  
 
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