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MMT05B350T3

更新时间： 2024-01-28 20:20:14
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管高压
页数 文件大小 规格书
5页 63K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT05B350T3 技术参数

是否无铅： 含铅生命周期：Active
零件包装代码：DO-214包装说明：CASE 403C, SMT, SMB, 2 PIN
针数：2Reach Compliance Code：unknown
风险等级：5.78其他特性：UL RECOGNIZED
最大转折电压：400 V配置：SINGLE
最大断态直流电压：300 VJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED通态非重复峰值电流：32 A
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

MMT05B350T3 数据手册

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MMT05B350T3  
Preferred Devices  
Product Preview  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
http://onsemi.com  
(
)
BIDIRECTIONAL TSPD  
50 AMP SURGE, 350 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
MT1  
MT2  
• High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled  
Temperature Environments  
• The MMT05B350T3 is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 and  
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
• Surface Mount Technology (SMT)  
MARKING DIAGRAMS  
•
Indicates UL Recognized − File #E210057  
• Pb−Free Package is Available  
AYWW  
RPBM G  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol Value Unit  
Off−State Voltage − Maximum  
V
DM  
300  
V
A
Y
= Assembly Location  
= Year  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive Double Exponential Decay  
Waveform (−25°C Initial Temperature)  
(Notes 1 and 2)  
A(pk)  
WW = Work Week  
RPBM = Specific Device Code  
2 x 10 msec  
8 x 20 msec  
10 x 160 msec  
10 x 360 msec  
10 x 560 msec  
10 x 700 msec  
10 x 1000 msec  
I
150  
150  
100  
100  
70  
70  
50  
PPS1  
PPS2  
PPS3  
PPS4  
PPS5  
PPS6  
PPS7  
G
= Pb−Free Package  
I
I
I
I
I
I
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Non−Repetitive Peak On−State Current  
60 Hz Full Sign Wave  
I
32  
A(pk)  
TSM  
MMT05B350T3  
SMB  
12 mm Tape & Reel  
(2.5 K/Reel)  
Maximum Non−Repetitive Rate of Change of  
On−State Current Exponential Waveform, < 100 A  
di/dt  
"300 A/ms  
MMT05B350T3G  
SMB  
(Pb−Free)  
12 mm Tape & Reel  
(2.5 K/Reel)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Allow cooling before testing second polarity.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Measured under pulse conditions to reduce heating.  
Preferred devices are recommended choices for future use  
and best overall value.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 2  
MMT05B350T3/D  
 
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