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MMT05B310T3G

更新时间： 2024-11-21 03:48:55
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安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管高压数据判读及分析中心
页数 文件大小 规格书
6页 62K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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中文翻译

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MMT05B310T3G 技术参数

是否无铅：不含铅生命周期：Obsolete
零件包装代码：DO-214包装说明：SMALL OUTLINE, R-PDSO-C2
针数：2Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.75Is Samacsys：N
其他特性：UL RECOGNIZED最大转折电压：365 V
配置：SINGLE最大断态直流电压：270 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified子类别：DIACs
表面贴装：YES端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

MMT05B310T3G 数据手册

 浏览型号MMT05B310T3G的Datasheet PDF文件第2页浏览型号MMT05B310T3G的Datasheet PDF文件第3页浏览型号MMT05B310T3G的Datasheet PDF文件第4页浏览型号MMT05B310T3G的Datasheet PDF文件第5页浏览型号MMT05B310T3G的Datasheet PDF文件第6页 
MMT05B230T3,  
MMT05B260T3,  
MMT05B310T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
http://onsemi.com  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
(
)
BIDIRECTIONAL TSPD  
50 AMPERE SURGE  
265 thru 365 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
MT1  
MT2  
• High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled  
Temperature Environments  
• The MMT05B230T3 Series is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
• Surface Mount Technology (SMT)  
MARKING DIAGRAMS  
•
Indicates UL Registered − File #E210057  
• Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
AYWW  
RPBx G  
G
Rating  
Symbol Value  
Unit  
Off−State Voltage − Maximum  
V
V
DM  
MMT05B230T3  
MMT05B260T3  
MMT05B310T3  
"170  
"200  
"270  
RPBx = Device Code  
x = G or J  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive Double Exponential Decay  
Waveform (Notes 1 and 2)  
A(pk)  
Y
= Year  
WW = Work Week  
(−25°C Initial Temperature)  
G
= Pb−Free Package  
8 x 20 msec  
I
"150  
"100  
"70  
PPS1  
PPS2  
PPS3  
PPS4  
I
I
I
10 x 160 msec  
10 x 560 msec  
10 x 1000 msec  
ORDERING INFORMATION  
"50  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Maximum Non−Repetitive Rate of Change of  
On−State Current Double Exponential Waveform,  
R = 1.0, L = 1.5 mH, C = 1.67 mF, I = 110A  
di/dt  
"150  
A/ms  
pk  
Preferred devices are recommended choices for future use  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Allow cooling before testing second polarity.  
and best overall value.  
2. Measured under pulse conditions to reduce heating.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 9  
MMT05B230T3/D  
 
123456

中文翻译

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