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MMT05B230T3_06

更新时间： 2024-11-25 03:48:55
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管高压
页数 文件大小 规格书
6页 62K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT05B230T3_06 数据手册

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MMT05B230T3,  
MMT05B260T3,  
MMT05B310T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
http://onsemi.com  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
(
)
BIDIRECTIONAL TSPD  
50 AMPERE SURGE  
265 thru 365 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
Features  
MT1  
MT2  
• High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled  
Temperature Environments  
• The MMT05B230T3 Series is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
• Surface Mount Technology (SMT)  
MARKING DIAGRAMS  
•
Indicates UL Registered − File #E210057  
• Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
AYWW  
RPBx G  
G
Rating  
Symbol Value  
Unit  
Off−State Voltage − Maximum  
V
V
DM  
MMT05B230T3  
MMT05B260T3  
MMT05B310T3  
"170  
"200  
"270  
RPBx = Device Code  
x = G or J  
Maximum Pulse Surge Short Circuit Current  
Non−Repetitive Double Exponential Decay  
Waveform (Notes 1 and 2)  
A(pk)  
Y
= Year  
WW = Work Week  
(−25°C Initial Temperature)  
G
= Pb−Free Package  
8 x 20 msec  
I
"150  
"100  
"70  
PPS1  
PPS2  
PPS3  
PPS4  
I
I
I
10 x 160 msec  
10 x 560 msec  
10 x 1000 msec  
ORDERING INFORMATION  
"50  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Maximum Non−Repetitive Rate of Change of  
On−State Current Double Exponential Waveform,  
R = 1.0, L = 1.5 mH, C = 1.67 mF, I = 110A  
di/dt  
"150  
A/ms  
pk  
Preferred devices are recommended choices for future use  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Allow cooling before testing second polarity.  
and best overall value.  
2. Measured under pulse conditions to reduce heating.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 9  
MMT05B230T3/D  
 
123456

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