Datasheet > MMF65R190PTH

MMF65R190PTH

更新时间： 2024-09-16 01:16:47

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1209K
描述
650V 0.19(ohm) N-channel MOSFET

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MMF65R190PTH 数据手册

MMF65R190P Datasheet

MMF65R190P

650V 0.19Ω N-channel MOSFET

 Description

MMF65R190P is power MOSFET using magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

700

0.19

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMF65R190PTH

65R190P

-55 ~ 150℃

TO-220F

Tube

Halogen Free

Jun. 2013 Revision 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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