Datasheet > MMF65R600QTH

MMF65R600QTH

更新时间： 2024-11-19 01:21:15

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1480K
描述
650V 0.60ohm N-channel MOSFET

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MMF65R600QTH 数据手册

MMF65R600Q Datasheet

MMF65R600Q

650V 0.60Ω N-channel MOSFET

 Description

MMF65R600Q is power MOSFET using Magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_{j, max}

R_{DS(on), max}

V_{GS(th), typ}

I_D

Value

700

0.60

Unit

Ω

7.3

Q_{g, typ}

13.8

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMF65R600QTH

65R600Q

-55 ~ 150℃

TO-220F

Tube

Compliant

Feb. 2017 Revision 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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