Datasheet > MMBZ33VALYFH

MMBZ33VALYFH

更新时间： 2024-12-01 11:14:35

品牌	Logo	应用领域
罗姆 - ROHM		电子瞬态抑制二极管
页数	文件大小	规格书
7页	1303K
描述
MMBZ33VALYFH是以高抗浪涌性为特点的瞬态抑制二极管，适合电子元器件的ESD保护。是符合AEC-Q101标准的高可靠性产品。

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中文翻译

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数据手册

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MMBZ33VALYFH 数据手册

MMBZ33VALYFH

ꢀ Transient Voltage Suppressor

(AEC-Q101 qualified)

Data sheet

●Outline

ꢀ

26.0

RWM

0.87

ꢀ ꢀ ꢀ

●Feature

●Inner Circuit

High reliability

Small mold type

●Application

●Packaging Specification

Packing

ESD Protection

Embossed Tape

Reel Size(mm)

TapingWidth(mm)

Quantity(pcs)

180

3000

T116

D7F

TapingCode

●Structure

Silicon Epitaxial Planar

Marking

ꢀ

(T = 25℃)

●Absolute Maximum Rating

Min. Max.

Parameter

Symbol

Conditions

Unit

tp＝10/1000us

PP1

MMBZ5V6ALY ～MMBZ10VALY

tp＝10/1000us

MMBZ12VALY ～MMBZ36VALY

Peak Pulse Power

PP2

Junction temperature

Storage temperature

150

℃

stg

-65 150

℃

On Glasss-epoxy substrate

OnAlumina substrate

225 mW

300 mW

Power dissipation

Air

Contact

IEC61000-4-2

level4

Machine model

ESD

ESD capability*

Human body model

MIL-STD-883 level3

CDM （Charged device model)

*IEC61000-4-2

500

C=150pFR=330Ω

Machine model

C=200pFR=0Ω

Human bodymodel

C=100pFR=1.5kΩ

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www.rohm.com

1/4

2020/05/19_Rev.003

12 3 4 5 6 7

中文翻译

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