Datasheet > MMBZ33VCT-Q

MMBZ33VCT-Q

更新时间： 2024-12-02 17:15:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	199K
描述
Low capacitance unidirectional double ESD protection diodeProduction

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MMBZ33VCT-Q 数据手册

MMBZ33VCT-Q

Low capacitance unidirectional double ESD protection diode

6 March 2024

Product data sheet

1. General description

Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common cathode

configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic

package. The device is designed for ESD and transient overvoltage protection of up to two signal

lines.

2. Features and benefits

•

Unidirectional ESD protection of two lines

•

Bidirectional ESD protection of one line

Very low diode capacitance: C_d≤ 25 pF

Reverse stand-off voltage: V_RWM= 26 V

Low clamping voltage: V_CL= 49 V typ. at I_PP= 2.8 A

ESD protection up to 20 kV (IEC 61000-4-2)

Ultra low leakage current: I_RM= 1 nA typ.

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Automotive electronic control units

Portable electronics

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

I_PPM

C_d

rated peak pulse

current

t_p= 8/20 µs

[1]

2.8

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5

12 3 4 5 6 7...10

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