是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-236 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 8.6 |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBZ33VAL,215 | NXP |
完全替代 |
MMBZxAL series - Low capacitance unidirectional double ESD protection diodes TO-236 3-Pin | |
MMBZ15VDL-7-F | DIODES |
功能相似 |
40W PEAK POWER DUAL SURFACE MOUNT TVS | |
MMBZ27VCL-7-F | DIODES |
功能相似 |
40W PEAK POWER DUAL SURFACE MOUNT TVS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBZ33VCL/DG | NXP |
获取价格 |
Double ESD protection diodes for transient overvoltage suppression | |
MMBZ33VCL/DG,215 | NXP |
获取价格 |
TVS DIODE | |
MMBZ33VCLDG | NXP |
获取价格 |
Double ESD protection diodes for transient overvoltage suppression | |
MMBZ33VCT-Q | NEXPERIA |
获取价格 |
Low capacitance unidirectional double ESD protection diodeProduction | |
MMBZ33VDG | NXP |
获取价格 |
Double ESD protection diodes for transient overvoltage suppression | |
MMBZ36VALY | ROHM |
获取价格 |
MMBZ36VALY是以高抗浪涌性为特点的瞬态抑制二极管,适合电子元器件的ESD保护。 | |
MMBZ36VALYFH | ROHM |
获取价格 |
MMBZ36VALYFH是以高抗浪涌性为特点的瞬态抑制二极管,适合电子元器件的ESD保护。 | |
MMBZ39VCLT1G | ONSEMI |
获取价格 |
Zener Diode Protection, Common Cathode, 40 Watt Peak Power, SOT-23 | |
MMBZ39VCLT3G | ONSEMI |
获取价格 |
Zener Diode Protection, Common Cathode, 40 Watt Peak Power, SOT-23 | |
MMBZ4617 | VISHAY |
获取价格 |
ZENER DIODES |