Datasheet > MMBZ33VBU-Q

MMBZ33VBU-Q

更新时间： 2024-12-02 17:15:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	258K
描述
Low capacitance bidirectional dual line ESD protection diodeProduction

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MMBZ33VBU-Q 数据手册

MMBZ33VBU-Q

Low capacitance bidirectional dual line ESD protection diode

4 April 2024

Product data sheet

1. General description

ESD protection device in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic

package, designed to protect two lines from the damage caused by ElectroStatic Discharge (ESD)

and other transients.

2. Features and benefits

•

Reverse stand-off voltage: V_RWM= 27 V

•

Low clamping voltage: V_CL= 31 V at I_PP= 3.9 A

ESD protection up to 30 kV (IEC 61000-4-2)

Low capacitance: C_d= 9 pF

High temperature capability: T_j= 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Automotive electronic control units

Portable electronics

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 µs

[1] [2]

3.9

clamping voltage

I_PPM= 3.9 A; t_p= 8/20 µs; T_amb= 25 °C [2] [3]

[1] According to IEC 61000-4-5

[2] Measured from pin 1 or 2 to pin 3

[3] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5

12 3 4 5 6 7...12

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