5秒后页面跳转
MMBZ15VDLT1G PDF预览

MMBZ15VDLT1G

更新时间: 2024-11-13 03:20:23
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管PC
页数 文件大小 规格书
6页 64K
描述
40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:4 weeks风险等级:0.98
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:225783Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-08-13 09:04:22
Is Samacsys:N其他特性:UL RECOGNIZED
最大击穿电压:15.8 V最小击穿电压:14.3 V
击穿电压标称值:15 V最大钳位电压:21.2 V
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:40 W
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.225 W
认证状态:Not Qualified最大重复峰值反向电压:12.8 V
子类别:Transient Suppressors表面贴装:YES
技术:ZENER端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MMBZ15VDLT1G 数据手册

 浏览型号MMBZ15VDLT1G的Datasheet PDF文件第2页浏览型号MMBZ15VDLT1G的Datasheet PDF文件第3页浏览型号MMBZ15VDLT1G的Datasheet PDF文件第4页浏览型号MMBZ15VDLT1G的Datasheet PDF文件第5页浏览型号MMBZ15VDLT1G的Datasheet PDF文件第6页 
MMBZ15VDLT1,  
MMBZ27VCLT1  
Preferred Devices  
40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
http://onsemi.com  
SOT−23 Dual Common Cathode Zeners  
for ESD Protection  
1
These dual monolithic silicon zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
cathode design protects two separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
The MMBZ27VCLT1 can be used to protect a single wire  
communication network form EMI and ESD transient surge voltages.  
The MMBZ27VCLT1 is recommended by the  
Society of Automotive Engineers (SAE), February 2000, J2411  
“Single Wire Can Network for Vehicle Applications” specification as  
a solution for transient voltage problems.  
3
2
PIN 1. ANODE  
2. ANODE  
3. CATHODE  
MARKING  
DIAGRAM  
3
1
2
XXX MG  
SOT−23  
CASE 318  
STYLE 9  
G
1
xxx = 15D or 27C  
Specification Features:  
M
= Date Code  
= Pb−Free Package  
SOT−23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range − 12.8 V, 22 V  
G
(Note: Microdot may be in either location)  
Standard Zener Breakdown Voltage Range − 15 V, 27 V  
ORDERING INFORMATION  
Peak Power − 40 W @ 1.0 ms (Bidirectional),  
Device  
Package  
Shipping  
per Figure 5 Waveform  
ESD Rating of Class N (exceeding 16 kV) per the Human  
Body Model  
MMBZ15VDLT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
MMBZ15VDLT1G SOT−23  
(Pb−Free)  
Low Leakage < 100 nA  
Flammability Rating: UL 94 V−O  
MMBZ15VDLT3  
SOT−23 10,000/Tape & Reel  
Pb−Free Packages are Available  
MMBZ15VDLT3G SOT−23 10,000/Tape & Reel  
(Pb−Free)  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
MMBZ27VCLT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
MMBZ27VCLT1G SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
July, 2005 − Rev. 7  
MMBZ15VDLT1/D  

MMBZ15VDLT1G 替代型号

型号 品牌 替代类型 描述 数据表
SZMMBZ15VDLT1G ONSEMI

完全替代

40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VALT1G ONSEMI

类似代替

24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ9V1ALT1G ONSEMI

类似代替

24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

与MMBZ15VDLT1G相关器件

型号 品牌 获取价格 描述 数据表
MMBZ15VDLT3 ONSEMI

获取价格

40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT3G ONSEMI

获取价格

40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ16V ONSEMI

获取价格

40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ16VAL NEXPERIA

获取价格

High surge current unidirectional double ESD protection diodesProduction
MMBZ16VAL JJM

获取价格

稳压管
MMBZ16VALFH ROHM

获取价格

Transient Voltage suppressor
MMBZ16VAL-Q NEXPERIA

获取价格

High surge current unidirectional double ESD protection diodeProduction
MMBZ16VALT1G ONSEMI

获取价格

40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ16VALY ROHM

获取价格

MMBZ16VALY是以高抗浪涌性为特点的瞬态抑制二极管,适合电子元器件的ESD保护。
MMBZ16VALYFH ROHM

获取价格

MMBZ16VALYFH是以高抗浪涌性为特点的瞬态抑制二极管,适合电子元器件的ESD保护。