MMBZ15VDL

更新时间： 2024-11-30 22:28:03

品牌	Logo	应用领域
美台 - DIODES		二极管电视光电二极管局域网
页数	文件大小	规格书
3页	75K
描述
40W PEAK POWER DUAL SURFACE MOUNT TVS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBZ15VDL 数据手册

MMBZ15VDL, MMBZ27VCL

40W PEAK POWER DUAL SURFACE MOUNT TVS

Features

Dual TVS in Common Cathode Configuration

for ESD Protection

SOT-23

40 Watt Peak Power Dissipation @1.0ms

(Unidirectional)

Dim

Min

Max

225 mW Power Dissipation

Ideally Suited for Automatic Insertion

Low Leakage

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Case Material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagram

Marking: Marking Code & Date Code,

See Page 2

Marking Code: See Table Below

Weight: 0.008 grams (Approx.)

Ordering Information: See Page 2

0.085 0.180

0° 8°

All Dimensions in mm

@T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

P_d

P_PK

Power Dissipation (Note 1)

225

Peak Power Dissipation (Note 2)

R_qJA

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

420

°C/W

°C

T_j,T_STG

–65 to +150

@T_A= 25°C unless otherwise noted

Electrical Characteristics

V_F= 0.9V max @ I_F= 10mA (Note 3)

Breakdown Voltage

V_BR(Note 3) (V)

V_C@ I_PP(Note 2)

Typical

Temperature

Coefficient

I_R

Type

Number

Marking

Code

V_RWM

@ I_T

V_C

I_PP

T_C(%/°C)

Volts

Min

Nom

Max

MMBZ15VDL

KVJ

12.8

100

14.3

15.8

1.0

21.2

1.9

+0.080

V_F= 1.1V max @ I_F= 200mA (Note 3)

Breakdown Voltage

V_BR(Note 3) (V)

_C@ I_PP(Note 2)

Typical

Temperature

Coefficient

I_R

Type

Number

Marking

Code

V_RWM

@ I_T

V_C

I_PP

T_C(%/°C)

Volts

Min

Nom

Max

MMBZ27VCL

KVP

25.65

28.35

1.0

+0.090

Note:

1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be

exceeded.

2. Non-repetitive current pulse per Figure 2 and derate above T_A= 25°C per Figure 1.

3. Short duration test pulse used to minimize self-heating effect.

DS30352 Rev. 3 - 2

1 of 3

MMBZ15VDL, MMBZ27VCL

www.diodes.com

12 3

中文翻译

下载PDF

与MMBZ15VDL相关器件

型号	品牌	获取价格	描述	数据表
MMBZ15VDL,215	NXP	获取价格	MMBZxVCL; MMBZxVDL series - Double ESD protection diodes for transient overvoltage suppres
MMBZ15VDL/DG	NXP	获取价格	Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDL_08	DIODES	获取价格	40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDL_1	DIODES	获取价格	40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDL-13	DIODES	获取价格	Trans Voltage Suppressor Diode, 40W, 12.8V V(RWM), Unidirectional, 2 Element, Silicon, PLA
MMBZ15VDL-7	DIODES	获取价格	40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDL-7-F	DIODES	获取价格	40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDLDG	NXP	获取价格	Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDL-Q	NEXPERIA	获取价格	Double ESD protection diode for transient overvoltage suppressionProduction
MMBZ15VDLQ-7	DIODES	获取价格	Trans Voltage Suppressor Diode, 40W, 12.8V V(RWM), Unidirectional, 2 Element, Silicon, GRE

与MMBZ15VDL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBZ15VDL

MMBZ15VDL 数据手册

与MMBZ15VDL相关器件

与MMBZ15VDL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBZ15VDL

MMBZ15VDL 数据手册

与MMBZ15VDL相关器件

与MMBZ15VDL相关文章

您还可以找

您在本页遇到什么问题？