Datasheet > MMBTSD2652W

MMBTSD2652W

更新时间： 2024-02-17 10:10:45

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	171K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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MMBTSD2652W 数据手册

MMBTSD2652W

NPN Silicon Epitaxial Planar Transistor

for low frequency amplifier and general purpose

amplification application

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CBO

V_CEO

V_EBO

I_C1)

I_CP

1.5

Collector Current

Power Dissipation

P_tot

T_j

200

150

Junction Temperature

Storage Temperature Range

¹⁾Single pulse, Pw = 1 ms

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

h_FE

Min.

270

Typ.

Max.

680

Unit

DC Current Gain

µA

at V_CE= 2 V, I_C= 200 mA

Collector Cutoff Current

at V_CB= 15 V

I_CBO

0.1

Emitter Cutoff Current

at V_EB= 6 V

I_EBO

0.1

Collector Base Breakdown Voltage

at I_C= 10 µA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 10 µA

Collector Emitter Saturation Voltage

at I_C= 500 mA, I_B= 25 mA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

f_T

0.2

Transition Frequency

400

MHz

at V_CE= 2 V, -I_E= 200 mA, f = 100 MHz

Output Capacitance

C_ob

at V_CB= 10 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 15/05/2007

中文翻译

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