Datasheet > MMBTX6515D

MMBTX6515D

更新时间： 2023-12-06 20:01:28

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	1070K
描述
小信号晶体管

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MMBTX6515D 数据手册

MMBTX6515D

Complementary NPN / PNP Silicon General Purpose Transistor

Features

• Transistor elements are independent,

eliminating interference

TR1

TR2

TR1: 1.Collector 5.Base 6.Emitter

TR2: 4.Collector 2.Base 3.Emitter

SOT-26 Plastic Package

Application

• General Purpose Small Signal Amplifier

Absolute Maximum Ratings (T_a= 25

Parameter

unless otherwise specified) (TR1)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

150

Absolute Maximum Ratings (T_a= 25

Parameter

unless otherwise specified) (TR2)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

150

Absolute Maximum Ratings at T_a= 25

(TR1 and TR2)

Parameter

Symbol

Value

300

Unit

Total Power Dissipation ^{1) 2)}

P_tot

Thermal Resistance from Junction to Ambient ¹⁾

Junction Temperature

R_θJA

T_j

417

150

Storage Temperature Range

T_stg

- 55 to + 150

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

200 mW per element must not be exceeded.

1 / 5

Dated：17/08/2023 Rev: 02

12 3 4 5

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