Datasheet > MMBTX2976DW

MMBTX2976DW

更新时间： 2024-09-28 14:55:47

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
6页	316K
描述
小信号晶体管

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MMBTX2976DW 数据手册

MMBTX2976DW

Complementary PNP / NPN Silicon Epitaxial Planar Transistors

TR1

TR2

TR1: 1. Base 5. Emitter 6. Collector

TR2: 2. Base 4. Emitter 3. Collector

SOT-363 Plastic Package

Maximum Ratings (T_a= 25℃):TR1

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

600

Maximum Ratings (T_a= 25℃):TR2

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

500

Maximum Ratings (T_a= 25℃): TR1 and TR2

Parameter

Symbol

P_tot

Value

200

Unit

℃

Total Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

625

℃

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

℃/W

Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 6

Dated: 07/03/2023 Rev: 02

12 3 4 5 6

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