Datasheet > MMBTX2927D

MMBTX2927D

更新时间： 2024-09-28 14:55:07

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	248K
描述
小信号晶体管

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MMBTX2927D 数据手册

MMBTX2927D

Complementary NPN/PNP Silicon Epitaxial Planar Transistor

TR2

TR1

Applications

• Ideal for Low Power Amplification and Switching

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-26 Plastic Package

Absolute Maximum Ratings (Ta = 25℃):TR1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

600

Absolute Maximum Ratings (Ta = 25℃):TR2

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

600

Maximum Ratings (T_a= 25℃):TR1&TR2

Parameter

Symbol

P_tot

Value

350

Unit

℃

Total Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

Thermal Resistance Junction to Ambient ¹⁾

T_stg

- 55 to + 150

357

℃

R_θJA

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

1 / 5

Dated: 16/03/2023 Rev: 02

12 3 4 5

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