Datasheet > MMBTSD471

MMBTSD471

更新时间： 2023-12-06 20:10:53

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	970K
描述
小信号晶体管

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MMBTSD471 数据手册

MMBTSD471

NPN Silicon Epitaxial Planar Transistor

Features

• The transistor is subdivided into three group O, Y

• and G according to its DC current gain.

• On special request, these transistors can be

• manufactured in different pin configurations.

1.Base 2.Emitter 3.Collector

SOT-23 Plastic Package

Applications

• Audio Frequency Power amplifier applications.

Absolute Maximum Ratings (Ta=25 C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

200

Power Dissipation

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_Stg

-55 to +150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated : 21/02/2022 Rev:02

12 3 4 5

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