Datasheet > MMBT945-L

MMBT945-L

更新时间： 2024-11-06 10:52:27

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	258K
描述
NPN Silicon Plastic-Encapsulate Transistor

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数据手册

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MMBT945-L 数据手册

M C C

MMBT945-L

MMBT945-H

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Capable of 0.2Watts of Power Dissipation.

NPN Silicon

Plastic-Encapsulate

Transistor

Collector-current 0.15A

Collector-base Voltage 60V

Operating and storage junction temperature range: -55^OC to +150^OC

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: CR

SOT-23

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I _C=1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I _C=100uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=100uAdc, I_C=0)

Vdc

5.0

Vdc

Collector Cutoff Current

0.1

uAdc

(V _CB=60Vdc, I =0Adc)

Collector Cutoff Current

CER

(V _CE=55Vdc,R=10M OHM)

I_EBO

Emitter Cutoff Current

DIMENSIONS

(V _EB=5.0Vdc, I =0Adc)

INCHES

MIN

ON CHARACTERISTICS

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

h _FE(1)

h _FE(2)

V _CE(sat)

V _BE(sat)

C_ob

DC Current Gain

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

(I =1.0mAdc, V_CE=6.0Vdc)

130

400

DC Current Gain

(I _C=0.1mAdc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

(I _C=100mAdc, I_B=10mAdc)

Base-Emitter Saturation Voltage

(I _C=100mAdc, I_B=10mAdc)

Collector output capacitance

0.3

1.0

3.0

Vdc

.085

.37

Suggested Solder

Pad Layout

.031

.800

(

_CB=10V, I _E=0 ,f=1MHz )

SMALL-SIGNAL CHARACTERISTICS

f _T

Transistor Frequency

(I =10mAdc, V_CE=6.0Vdc, f=30MHz)

150

MHz

.035

.900

CLASSIFICATION OF HFE (1)

Rank

Range

.079

2.000

inches

130-200

200-400

.037

.950

.037

.950

www.mccsemi.com

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Revision: A

2011/01/01

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