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MMBTA05 PDF预览

MMBTA05

更新时间: 2024-11-06 04:39:27
品牌 Logo 应用领域
TAITRON 晶体晶体管
页数 文件大小 规格书
3页 203K
描述
SMD General Purpose Transistor (NPN)

MMBTA05 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:5.67最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

MMBTA05 数据手册

 浏览型号MMBTA05的Datasheet PDF文件第2页浏览型号MMBTA05的Datasheet PDF文件第3页 
SMD General Purpose  
Transistor (NPN)  
MMBTA05/MMBTA06  
SMD General Purpose Transistor (NPN)  
Features  
NPN Silicon Epitaxial Planar Transistor for  
Switching and Amplifier Applications  
RoHS compliance  
SOT-23  
Mechanical Data  
Case:  
Terminals:  
Weight:  
SOT-23, Plastic Package  
Solderable per MIL-STD-202G, Method 208  
0.008 gram  
Maximum Ratings (T Ambient=25ºC unless noted otherwise)  
Symbol  
Description  
MMBTA05  
MMBTA06  
Unit  
Marking Code  
1H  
60  
60  
1G  
80  
80  
Collector-Base Voltage  
V
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
4.0  
500  
V
Collector Current  
mA  
mW  
° C /W  
° C  
° C  
Power Dissipation above 25°C  
Thermal Resistance from Junction to Ambient  
Junction Temperature  
250  
Ptot  
560  
RθJA  
TJ  
150  
-55 to +150  
Storage Temperature Range  
TSTG  
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com  
Rev. A/AH 2008-01-10  
Page 1 of 3  
Tel: (800)-TAITRON (800)-824-8766  
Fax: (800)-TAITFA (800)-824-8329  
(661)-257-6060  
(661)-257-6415  

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