Datasheet > MMBT5401

MMBT5401

更新时间： 2024-09-27 04:39:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管光电二极管
页数	文件大小	规格书
3页	184K
描述
PNP General Purpose Transistor

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中文翻译

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MMBT5401 数据手册

BL Galaxy Electrical

Production specification

PNP General Purpose Transistor

MMBT5401

FEATURES

Lead-free

Epitaxial planar die construction.

Complementary NPN type available

(MMBT5551).

Also available in lead free version.

APPLICATIONS

Ideal for medium power amplification and switching

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBT5401

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

Collector dissipation

junction and storage temperature

-160

-150

-5

-0.6

P_C

0.3

°C

T_j,T_stg

-55-150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Parameter

Test conditions

MIN. MAX. UNIT

Collector-base breakdown voltage

I_C=-100μA,I_E=0

-160

-150

-5

Collector-emitter breakdown voltage I_C=-1mA,I_B=0

Emitter-base breakdown voltage

collector cut-off current

I_E=-10μA,I_C=0

I_E= 0; V_CB= -120V

I_C= 0; V_EB= -4V

V_CE= -5V; I_C= -1mA

-0.1

μA

I_EBO

emitter cut-off current

h_FE

DC current gain

_CE= -5V;I_C= -10mA

_CE= -5V;I_C= -50 mA

250

V_CE(sat)

V_BE(sat)

collector-emitter saturation voltage

base-emitter saturation voltage

I_C= -50 mA; I_B= -5 mA

I_C= -10mA; V_CE= -5V;

f = 30MHz

-0.5

-1

f_T

transition frequency

100

MHz

Document number: BL/SSSTC075

Rev.A

www.galaxycn.com

12 3

中文翻译

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与MMBT5401相关器件

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MMBT5401/D87Z	TI	获取价格	200mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5401/S62Z	TI	获取价格	200mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5401_07	DIOTEC	获取价格	Surface Mount General Purpose Si-Epi-Planar Transistors
MMBT5401_08	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5401_1	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5401_11	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5401_11	MCC	获取价格	PNP Plastic Encapsulate Transistor
MMBT5401_15	KEXIN	获取价格	PNP Transistors
MMBT5401_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5401_D87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SO-3