Datasheet > MMBT5401DW (KMBT5401DW)

MMBT5401DW (KMBT5401DW)

更新时间： 2024-09-29 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	268K
描述
PNP Transistor

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中文翻译

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数据手册

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MMBT5401DW (KMBT5401DW) 数据手册

浏览型号MMBT5401DW (KMBT5401DW)的Datasheet PDF文件第2页

SMD Type

Transistors

PNP Transistor

MMBT5401DW (KMBT5401DW)

Ƶ Features

ƽ Silicon epitaxial planar transistor

ƽ For high voltage amplifier applications

1. Emitter1

2. Base1

3. Collector2

4. Emitter2

5. Base2

TR2

6. Collector1

TR1

Ƶ Absolute Maximum Ratings (Ta = 25ć)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Rating

-160

-150

-5

-600

Unit

Power Dissipation

Ptot

200

Junction Temperature

Storage Temperature range

Tstg

150

-55 to +150

Ƶ Electrical Characteristics (Ta = 25ć)

Parameter

Symbol

VCBO

VCEO

VEBO

ICBO

Test Conditions

Ic= -100 ȝAˈ IE=0

Ic= -1.0 mAˈ IB=0

IE= -10 ȝAˈ IC=0

VCB= -120V , IE=0

VEB= -3V , IC=0

IC=-10 mA, IB=-1 mA

IC=-50 mA, IB=-5 mA

IC=-10 mA, IB=-1 mA

IC=-50 mA, IB=-5 mA

IC= - 1 mA, VCE= -5 V

IC= - 10 mA, VCE= -5 V

IC= - 50 mA, VCE= -5 V

IC =-10mA, VCE =-10V, f = 100MHz

VCB = -10 V, f = 1 MHz

Min

-160

-150

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

-50

-0.2

-0.5

-1

IEBO

Collector-emitter saturation voltage

Base - emitter voltage

VCE(sat)

VBE(sat)

-1

DC current gain

hFE

240

Transition frequency

Output Capacitance

Cobo

100

300

MHz

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