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MMBT2369LT1 PDF预览

MMBT2369LT1

更新时间: 2024-01-13 14:31:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 307K
描述
Switching Transistors

MMBT2369LT1 技术参数

生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.12Is Samacsys:N
最大集电极电流 (IC):0.2 A基于收集器的最大容量:4 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:0.225 W
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
最大关闭时间(toff):18 ns最大开启时间(吨):12 ns
VCEsat-Max:0.25 VBase Number Matches:1

MMBT2369LT1 数据手册

 浏览型号MMBT2369LT1的Datasheet PDF文件第2页浏览型号MMBT2369LT1的Datasheet PDF文件第3页浏览型号MMBT2369LT1的Datasheet PDF文件第4页浏览型号MMBT2369LT1的Datasheet PDF文件第5页浏览型号MMBT2369LT1的Datasheet PDF文件第6页浏览型号MMBT2369LT1的Datasheet PDF文件第7页 
Order this document  
by MMBT2369LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
3
NPN Silicon  
*Motorola Preferred Device  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
3
Rating  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
Unit  
Vdc  
1
V
CEO  
15  
40  
2
V
CES  
Vdc  
V
40  
Vdc  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
CBO  
EBO  
EmitterBase Voltage  
V
4.5  
200  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage (3)  
V
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
15  
40  
40  
4.5  
C
B
CollectorEmitter Breakdown Voltage  
(I = 10 µAdc, V = 0)  
V
(BR)CES  
(BR)CBO  
(BR)EBO  
C
BE  
CollectorBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
V
Vdc  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
Vdc  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 20 Vdc, I = 0)  
0.4  
30  
E
= 20 Vdc, I = 0, T = 150°C)  
E
A
Collector Cutoff Current  
(V = 20 Vdc, V = 0)  
I
µAdc  
CES  
MMBT2369A  
0.4  
CE BE  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

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