MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
15
Unit
Vdc
1
BASE
V
CEO
V
40
Vdc
2
CES
CBO
EBO
EMITTER
V
V
40
Vdc
4.5
200
Vdc
3
Collector Current − Continuous
I
mAdc
C
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
1
Characteristic
Symbol
Max
Unit
2
Total Device Dissipation FR−5 Board
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAMS
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
xxx M G
G
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
1
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
xxx = M1J or 1JA
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
SOT−23 3000/Tape & Reel
MMBT2369LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
MMBT2369ALT1
SOT−23 3000/Tape & Reel
MMBT2369ALT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 5
MMBT2369LT1/D